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Solutions to Gate Oxide Integrity on TFSOI Substrates Caused by PMOS Threshold-Voltage Implant

Author(s):
Publication title:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
510
Pub. Year:
1998
Page(from):
417
Pub. info.:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
Language:
English
Call no.:
M23500/510
Type:
Conference Proceedings

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