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Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical-Beam Epitaxy

Author(s):
MacKenzie, J. D.
Abernathy, C. R.
Pearton, S. J.
Hommerich, U.
Seo, J. T.
Ren, F.
Wilson, R. G.
Chen, P.
Zavada, J. M.
4 more
Publication title:
Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
510
Pub. date:
1998
Page(from):
325
Pub. info.:
Warrendale, Pa: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994164 [1558994165]
Language:
English
Call no.:
M23500/510
Type:
Conference Proceedings

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