Blank Cover Image

Influence of RTP on Vacancy Concentrations

Author(s):
Publication title:
Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
490
Pub. Year:
1998
Page(from):
129
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993952 [1558993959]
Language:
English
Call no.:
M23500/490
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Vacancy-Nitrogen Complexes in Float-Zone Silicon

Quast, F., Pichler, P., Ryssel, H., Falster, R.

Electrochemical Society
7 Conference Proceedings TRACE ANALYSIS OF SILICON SURFACES USING ANGLE- DEPENDENT TOTAL-REFLECTION X-RAY FLUORESCENCE

Streckfuss, N., Frey, L., Pichler, P., Kuegel, M., Zielonka, G., Ryssel, H.

Electrochemical Society
2 Conference Proceedings Vacancy-Nitrogen Complexes in Float-Zone Silicon

Quast,F., Pichler,P., Ryssel,H., Falster,R.

Electrochemical Society, SPIE-The International Society for Optical Engineering
8 Conference Proceedings Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon

Brindos, R., Clark, M.H., Jones, K.S., Griglione, M., Gossmann, Hans-J., Agarwal, A., Murto, B., Andideh, E.

Materials Research Society
3 Conference Proceedings On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion

Stiebel, D., Pichler, P., Ryssel, H.

MRS - Materials Research Society
9 Conference Proceedings SIMULATION OF BURIED LAYER EXPERIMENTS CONTAIN- ING ALL FOUR DOPANT SPECIES

Ghaderi, K., Hobler, G., Budil, M., Poetzl, H., Pichler, P., Ryssel, H., Hansch, W., Eisele, I., Tian, C., Stingeder, G.

Electrochemical Society
4 Conference Proceedings AN INVESTIGATION OF VACANCY CONCENTRATIONS IN BULK SILICON

Zimmermann, Horst, Ryssel, H.

Materials Research Society
10 Conference Proceedings A STUDY OF VACANCY DISTRIBUTIONS IN SILICON DURING TECHNOLGICAL PROCESSES

Zimmermann, H., Ryssel, H.

Electrochemical Society
5 Conference Proceedings The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behaviour

Falster, R., Gambaro, D., Olmo, M., Cornara, M., Korb, H.

Electrochemical Society
11 Conference Proceedings RELAXATION BEHAVIOR OF METASTABLE As AND P CONCENTRATIONS IN Si AFTER PULSED AND CW LASER ANNEALING

Goetzlich, J., Tsien, P. H., Ryssel, H.

North-Holland
6 Conference Proceedings The Engineering of Silicon Water Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior

Falster, R., Gambaro, D., Olmo, M., Cornara, M., Korb, H.

MRS - Materials Research Society
12 Conference Proceedings INFLUENCE OF POLYSILICON AND CRUCIBLE PURITY ON THE MINORITY CARRIER RECOMBINATION LIFETIME OF CZOCHRALSKI SILICON CRYSTALS

Borionetti, G., Porrini, M., Geranzani, P., Orizio, R., Falster, R.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12