Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition

Growth and Properties of W-Si-N Diffusion Barriers Deposited by Chemical Vapor Deposition

Author(s):

Publication title:

Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

427

Pub. Year:

1996

Page(from):

389

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993303 [1558993304]

Language:

English

Call no.:

M23500/427

Type:

Conference Proceedings

Details

TDL ID:	ZA00017054
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced metallization for future ulsi
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.11

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