On the Influence of Illumination During Ion Damage Defect Anneal of Silicon
- Author(s):
- Publication title:
- Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 396
- Pub. Year:
- 1996
- Page(from):
- 709
- Pub. info.:
- Pittsburgh: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992993 [1558992995]
- Language:
- English
- Call no.:
- M23500/396
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Formation of Defects in Ion Implanted Silicon during Rapid lsothermal Annealing
Trans Tech Publications |
MRS - Materials Research Society |
2
Conference Proceedings
Ion Implantation-Induced Defects and the Influence of Titanium Silicidation
MRS - Materials Research Society |
8
Conference Proceedings
INTERACTION OF ATOMIC HYDROGEN WITH ION BOMBARDMENTS INDUCED DEFECTS AT Si/SiO2 INTERFACES
Materials Research Society |
3
Conference Proceedings
ON THE INFLUENCE OF DOPING AND ANNEALING ON OXYGEN-RELATED DEFECTS IN SILICON.
Trans Tech Publications |
Materials Research Society |
Materials Research Society |
10
Conference Proceedings
Carrier Dynamics at Deep Traps in Ion Implanted Silicon : Possible Signature of Defect Clusters
SPIE-The International Society for Optical Engineering |
Materials Research Society |
11
Conference Proceedings
ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |