Growth of Si1-xSnx Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (IBIEC) and Solid Phase Epitaxial Growth (SPEG)

Growth of Si1-xSnx Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (IBIEC) and Solid Phase Epitaxial Growth (SPEG)

Author(s):

Kobayashi, N.

Publication title:

Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

396

Pub. Year:

1996

Page(from):

207

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992993 [1558992995]

Language:

English

Call no.:

M23500/396

Type:

Conference Proceedings

Details

TDL ID:	ZA00017051
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ion-solid interactions for materials modification and processing
Conf. info. (Number):	1995
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.12.01

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