Blank Cover Image

The Influence of Non-Stoichiometry on the Electrical Activation of n-Type Dopants in InP

Author(s):
Publication title:
Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
378
Pub. Year:
1995
Page(from):
683
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992818 [1558992812]
Language:
English
Call no.:
M23500/378
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings THE INFLUENCE OF IMPLANTATION-INDUCED NON-STOICHIOMETRY ON THE EPITAXIAL RECRYSTALLIZATION OF CoSi2

Ridgway, M. C., Vantomme, A., Bavel, A.-M. Van, Langouche, G.

MRS - Materials Research Society
7 Conference Proceedings Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC

Aradi, B., Gali, A., Deak, P., Son, N.T., Janzen, E.

Trans Tech Publications
2 Conference Proceedings Solid-Phase Epitaxial Growth of Amorphized GaAs: The Influence of Microscopic and Macroscopic Non-Stoichiometry

Belay, K. B., Llewellyn, D. J., Ridgway, M. C.

MRS - Materials Research Society
8 Conference Proceedings Electrical Characterization of 1 KeV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

Deenapanray, P. N. K., Auret, F. D., Ridgway, M. C., Goodman, S. A., Myburg, G.

MRS - Materials Research Society
3 Conference Proceedings AMPHOTERIC BEHAVIOUR OF Ge IN InP: A RBS/CHANNELING AND DIFFERENTIAL HALL/RESISTIVITY STUDY

Kringhoj, P.

Materials Research Society
9 Conference Proceedings IMPURITY PROFILES IN InP FROM ION IMPLANTATION AT ELEVATED TEMPERATURES

Kringhoj, P., Svensson, B. G.

Materials Research Society
4 Conference Proceedings Rapid thermal annealing of InP implanted with group IV elements

Ridgway, M. C., Kringhof, P.

MRS - Materials Research Society
10 Conference Proceedings Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition

Gotz,W., Johnson,N.M.

Trans Tech Publications
5 Conference Proceedings Activation of Acceptors in Mg-Doped, p-Type GaN

Gotz, W., Johnson, N. M., Walker, J., Bour, D. P.

MRS - Materials Research Society
11 Conference Proceedings HYDROGEN PASSIVATION OF Si AND Be DOPANTS IN InAlAs

Roos, G., Johnson, N. M., Pao, Y. C., Harris Jr., J. S.

Materials Research Society
6 Conference Proceedings Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC

Aradi, B., Gali, A., Deak, P., Son, N.T., Janzen, E.

Trans Tech Publications
12 Conference Proceedings KINETICS OF DOPANT METASTABILITY IN a-Si:H

Nebel, C.E., Street, R.A., Johnson, N.M., Jackson, W.B.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12