Study of Deep Levels by Admittance Spectroscopy in High Resistivity P-Type 6H-SiC Single Crystals
- Author(s):
- Publication title:
- Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 378
- Pub. Year:
- 1995
- Page(from):
- 539
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992818 [1558992812]
- Language:
- English
- Call no.:
- M23500/378
- Type:
- Conference Proceedings
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