Influence of impurity atoms on luminescence of Er-doped silicon structures
- Author(s):
Sobolev,N.A. ( A.F.Ioffe Physical-Technical Institute ) Aleksandrov,O.V. Bresler,M.S. Gusev,O.B. Khakuashev,P.E. Kudryavtsev,Yu.A. Makoviichuk,M.I. Nikolaev,Yu.A. Pak,P.E. Parshin,E.O. Shek,E.I. Trishenkov,M.A. Zakhar'in,A.O. - Publication title:
- Light-Emitting Diodes: Research, Manufacturing, and Applications
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3002
- Pub. Year:
- 1997
- Page(from):
- 198
- Page(to):
- 203
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819424136 [0819424137]
- Language:
- English
- Call no.:
- P63600/3002
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon
SPIE-The International Society for Optical Engineering |
2
Conference Proceedings
Electroluminescence and excitation mechanism of erbium ions in erbium-doped crystalline silicon
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
MRS - Materials Research Society |
Electrochemical Society |
4
Conference Proceedings
Influence of fabrication conditions on properties of Si:Er light-emitting structures
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Formation of Er-Related Donor Centers During Postimplantation Annealing of Si:Er
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
12
Conference Proceedings
Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:H(Er)
MRS - Materials Research Society |