1.3- and 1.55-ｦﾌm InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence

1.3- and 1.55-ｦﾌm InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence

Author(s):

Ma,X. ( Institute of Semiconductors )

Publication title:

Integrated Optoelectronics

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2891

Pub. Year:

1996

Page(from):

46

Page(to):

48

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819422927 [0819422924]

Language:

English

Call no.:

P63600/2891

Type:

Conference Proceedings

Details

TDL ID:	ZA00017029
Series ID:	PA00000029
Conf. info. (Name):	Photonics China : Integrated Optoelectronics
Conf. info. (Number):	1996
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	1996.11.04-1996.11.05

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