Nature of D-Defeet in CZ Silicon:D-Defect Dissolution and D-Defect Related T.D.D.B

Nature of D-Defeet in CZ Silicon:D-Defect Dissolution and D-Defect Related T.D.D.B

Author(s):

Publication title:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

Title of ser.:

Materials science forum

Ser. no.:

196-201

Pub. Year:

1995

Pt.:

4

Page(from):

1697

Page(to):

1706

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020219
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS
Conf. info. (Number):	18th
Conf. info. (Venue):	Sendai, Japan
Conf. info. (Date):	1995.07.23-1995.07.28

Similar Items:

1 Conference Proceedings STRUCTURE AND MORPHOLOGY OF 'D-DEFECTS' IN CZ Si Park, J-G., Kirk, H., Cho, K-C., Lee, H-K., Lee, C-S., Rozgonyi, G.A. Electrochemical Society	7 Conference Proceedings *DEFECT CONTROL IN Cz SILICON Kirscht, F. G., Kim,. S. B., Yeh, J. J., Wildes, P. D., Zaumseil, P. Materials Research Society
2 Conference Proceedings Correlat ion of Substrate D-Defects in CZ Silicon with MOS Breakdown Park, J-G., Kirk, H., Lee, C-S., Lee, H-K., Lee, D-M., Rozgonyi, G.A. Electrochemical Society	8 Conference Proceedings Theoretical Analysis of Nitrogen Complexes in Cz Silicon Funao, D., Ohkubo, I., Inoue, N., Karoui, A., Rozgonyi, G.A. Electrochemical Society
3 Conference Proceedings Thermally Induced Dislocation and Slip Defects in Silicon Cho, C.R., Kim, Y.S., Lee, J.K., Ko, S.W., Choi, D.J., Son, C.B., Stephens, A.E., Rozgonyi, G.A. Electrochemical Society	9 Conference Proceedings Deep Level Transient Spectroscopy Study of Dislocations and Related Defects in SiGe/Si Heterostructures J. Lu, Y. Park, G. Rozgonyi Electrochemical Society
4 Conference Proceedings INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE Rozgonyi, G.A. Electrochemical Society	10 Conference Proceedings INVITED: SILICON WAFER DEFECT ENGINEERING Rozgonyi, G.A. Electrochemical Society
5 Conference Proceedings INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE Rozgonyi, G.A. Electrochemical Society	11 Conference Proceedings Photoexcitation Induced Suppression of Point Defect Formation during Ion Implantation in Silicon Cho, C.R., Yarykin, N., Rozgonyi, G.A., Zuhr, R.A. Electrochemical Society
6 Conference Proceedings Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates Park, J.G., Ushio, S., Takeno, H., Cho, K.-C., Kim, J.-K., Rozgonyi, G.A. Electrochemical Society	12 Conference Proceedings FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY Karoui, A., Karoui, F.S., Rozgonyi, G.A., Hourai, M., Sueoka, K. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12