Monitoring process-induced oxide breakdown and its correlation to interface traps

Monitoring process-induced oxide breakdown and its correlation to interface traps

Author(s):

Balasinski,A. ( SGS Thomson Microelectronics )
Hodges,R. ( SGS Thomson Microelectronics )
Walters,J. ( SGS Thomson Microelectronics )
Spinner,C.R. ( SGS Thomson Microelectronics )

Publication title:

In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3215

Pub. Year:

1997

Page(from):

109

Page(to):

116

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426475 [0819426474]

Language:

English

Call no.:

P63600/3215

Type:

Conference Proceedings

Details

TDL ID:	ZA00016931
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
Conf. info. (Number):	1997
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1997.10.01-1997.10.02

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