Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

Author(s):

Ma,Y. ( Lucent Technologies Bell labs. )

Lee,J.L. ( Lucent Technologies Bell labs. )

Benton,J.L. ( Lucent Technologies Bell labs. )

Boone,T. ( Lucent Technologies Bell labs. )

Eaglesham,D.J. ( Lucent Technologies Bell labs. )

Higashi,G.S. ( Lucent Technologies Bell labs. )

1 more

Publication title:

In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3215

Pub. Year:

1997

Page(from):

17

Page(to):

24

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426475 [0819426474]

Language:

English

Call no.:

P63600/3215

Type:

Conference Proceedings

Details

TDL ID:	ZA00016931
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing
Conf. info. (Number):	1997
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1997.10.01-1997.10.02

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