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Arsenic-implanted GaAs: an alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications (Invited Paper)

Author(s):
  • Pan,C.-L. ( National Chiao Tung Univ.(Taiwan) )
  • Lin,G.-R. ( National Chiao Tung Univ.(Taiwan) )
Publication title:
Ultrafast Phenomena in Semiconductors II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3277
Pub. Year:
1998
Page(from):
170
Page(to):
178
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427168 [0819427160]
Language:
English
Call no.:
P63600/3277
Type:
Conference Proceedings

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