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Non-Equilibrium Related Effects in MOS-SOI Structures Capacitance-Voltage Measurements Analysis

Author(s):
Publication title:
Physics of - Semiconductor Devices -
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3316
Pub. date:
1998
Vol.:
Part 2
Page(from):
1080
Page(to):
1082
Pub. info.:
New Delhi: Narosa Publishing House
ISSN:
0277786X
ISBN:
9780819427564 [081942756X]
Language:
English
Call no.:
P63600/3316
Type:
Conference Proceedings

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