High-Mobility Heterostructure PMOSFET Using Strain-Compensated SiGeC Channel
- Author(s):
- Publication title:
- Physics of - Semiconductor Devices -
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3316
- Pub. Year:
- 1998
- Vol.:
- Part 2
- Page(from):
- 1044
- Page(to):
- 1047
- Pub. info.:
- New Delhi: Narosa Publishing House
- ISSN:
- 0277786X
- ISBN:
- 9780819427564 [081942756X]
- Language:
- English
- Call no.:
- P63600/3316
- Type:
- Conference Proceedings
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