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A. Comparison of C-V and I-V Characteristics of Partially and Fully Depleted Gate-Controlled Diodes

Author(s):
Publication title:
Physics of - Semiconductor Devices -
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3316
Pub. date:
1998
Vol.:
Part 2
Page(from):
1006
Page(to):
1009
Pub. info.:
New Delhi: Narosa Publishing House
ISSN:
0277786X
ISBN:
9780819427564 [081942756X]
Language:
English
Call no.:
P63600/3316
Type:
Conference Proceedings

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