Blank Cover Image

Doping Behaviour of In0.53Ga0.47As and InP Grown by Metalorganic Vapour Phase Epitaxy

Author(s):
Publication title:
Physics of - Semiconductor Devices -
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3316
Pub. date:
1998
Vol.:
Part 1
Page(from):
289
Page(to):
292
Pub. info.:
New Delhi: Narosa Publishing House
ISSN:
0277786X
ISBN:
9780819427564 [081942756X]
Language:
English
Call no.:
P63600/3316
Type:
Conference Proceedings

Similar Items:

Arora,B.M., Gokhale,M., Shah,A.P., Chandrasekharan,K.S.

SPIE-The International Society for Optical Engineering

Arent, D.J., Bertness, K.A., Kurtz, Sarah R., Bode, M., Olson, J.M.

Materials Research Society

Cotell, C.M., Panish, M.B., Hamm, R.A., Hopkins, L.C., Gibson, J.M.

Materials Research Society

Schwarz, S. A., Mei, P., Hwang, D. M., Schwartz, C. L., Venkatesan, T., Palmstrom, c. J., Stoffel, N. G., Bhat, R.

Materials Research Society

Stadler, B. J. H., Lorenzo, J. P.

MRS - Materials Research Society

Wesstroem, J.-O.J., Hieke, K., Stalnacke, B., Palm, T., Stolz, B.

Electrochemical Society

Podor,B., Vignaud,D., Tiginyanu,I. M., Csontos,L., Ursaki,V. V., Shontya,V. P.

SPIE-The International Society for Optical Engineering

Nolle,E.L., Prokhorov,A.M., Sadofyev,Yu.G., Schelev,M.Ya., Senkov,V.M., Vulis,Yu.D.

SPIE-The International Society for Optical Engineering

J. M. Zahler, K. Tanabe, C. Ladous, T. Pinnington, F. D. Newman, H. A. Atwater

SPIE - The International Society of Optical Engineering

Rowell, N.L., Lockwood, D.J., Poole, P.J., Yu, G.

Materials Research Society

Yan, J., Ru, G., Choa, F.-S.

SPIE - The International Society of Optical Engineering

Dhar,S., Paul,Shampa

SPIE - The International Society for Optical Engineering

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12