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TWO DIMENSIONAL MOS-TRANSISTOR MODELING

Author(s):
Publication title:
Process and device simulation for MOS-VLSI circuits
Title of ser.:
NATO ASI series. Series E, Applied sciences
Ser. no.:
62
Pub. Year:
1983
Page(from):
490
Page(to):
581
Pages:
92
Pub. info.:
Boston: Martinus Nijhoff Publishers
ISSN:
0168132X
ISBN:
9789024728244 [902472824X]
Language:
English
Call no.:
N11482/62
Type:
Conference Proceedings

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