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THERMAL OXIDATION: KINETICS, CHARGES, PHYSICAL MODELS, AND INTERACTION WITH OTHER PROCESSES IN VLSI DEVICES

Author(s):
Publication title:
Process and device simulation for MOS-VLSI circuits
Title of ser.:
NATO ASI series. Series E, Applied sciences
Ser. no.:
62
Pub. date:
1983
Page(from):
48
Page(to):
87
Pages:
40
Pub. info.:
Boston: Martinus Nijhoff Publishers
ISSN:
0168132X
ISBN:
9789024728244 [902472824X]
Language:
English
Call no.:
N11482/62
Type:
Conference Proceedings

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