Electronic States in Heavily and Ordered Doped Superlattice Semiconductors
- Author(s):
- Publication title:
- Properties of impurity states in superlattice semiconductors
- Title of ser.:
- NATO ASI series. Series B, Physics
- Ser. no.:
- 183
- Pub. Year:
- 1988
- Page(from):
- 147
- Page(to):
- 158
- Pages:
- 12
- Pub. info.:
- New York: Plenum Press
- ISBN:
- 9780306430091 [0306430096]
- Language:
- English
- Call no.:
- N11479/183
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Structure and Electronic Properties of Strained Si/Ge Semiconductor Superlattices
Plenum Press |
Plenum Press |
Plenum Press |
Materials Research Society |
Plenum Press |
9
Conference Proceedings
*THE EFFECTS OF INTERFACE STRAIN AND DIPOLE LAYERS ON THE ELECTRONIC PROPERTIES OF LATTICE MATCHED III-V SEMICONDUCTOR SUPERLATTICES
Materials Research Society |
Plenum Press |
Plenum Press |
Plenum Press |
Plenum Press |
Plenum Press |
Trans Tech Publications |