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Stress-induced leakage currents of CMOS ULSI devices with shallow trench isolation

Author(s):
Publication title:
Microelectronic Device Technology III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3881
Pub. date:
1999
Page(from):
224
Page(to):
233
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819434784 [0819434787]
Language:
English
Call no.:
P63600/3881
Type:
Conference Proceedings

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