Effects of indium implant and post-RTA on performance and reliability of sub-100-nm retrograde channel NMOSFETs

Effects of indium implant and post-RTA on performance and reliability of sub-100-nm retrograde channel NMOSFETs

Author(s):

Xiang,Q. ( Advanced Micro Devices,Inc )
Yu,B.
Yeap,G.C.-F.
Lin,M.-R.

Publication title:

Microelectronic Device Technology III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3881

Pub. Year:

1999

Page(from):

186

Page(to):

194

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434784 [0819434787]

Language:

English

Call no.:

P63600/3881

Type:

Conference Proceedings

Details

TDL ID:	ZA00016694
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic Dvece Technology
Conf. info. (Number):	1999 : 3rd
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1999.09.22-1999.09.23

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