Metal gates for advanced CMOS technology

Metal gates for advanced CMOS technology

Author(s):

Maiti,B. ( Motorola )
Tobin,P.J.

Publication title:

Microelectronic Device Technology III

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3881

Pub. Year:

1999

Page(from):

46

Page(to):

57

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434784 [0819434787]

Language:

English

Call no.:

P63600/3881

Type:

Conference Proceedings

Details

TDL ID:	ZA00016694
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic Dvece Technology
Conf. info. (Number):	1999 : 3rd
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1999.09.22-1999.09.23

Similar Items:

1 Conference Proceedings METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society	7 Conference Proceedings 26 Tantalum-based Gate Electrode Metals for Advanced CMOS Devices Hooker, J. C., Lander, R.J.P., Cubaynes, F. N., Schram, T., Roozeboom, F., van Zijl, J., Moos, M., van den Heuvel, F.C., … Electrochemical Society
2 Conference Proceedings Evaluation Of Candidate Metals For Dual-Metal Gate Cmos With Hfo_2 Gate Dielectric Samavedam, S.B., Schaeffer, J.K., Gilmer, D.C., Dhandapani, V., Tobin, P.J., Mogab, J., Nguyen, B-Y., Dakshina-Murthy, … Materials Research Society	8 Conference Proceedings 44. Poly-Si gate CMOS with hafnium silicate gate dielectric Hobbs, C., Grant, J., Kher, S., Dhandapani, V., Taylor, B., Dip, L., Hegde, R., Metzner, C., Tseng, H., Gilmer, D., … Electrochemical Society
3 Conference Proceedings Performance and Reliability of Scaled Gate Dielectrics Paulson, W. M., Tobin, P. J., Tseng, H-H., Maiti, B., Gelatos, C., Hegde, R. I., Anderson, S. G. H. MRS - Materials Research Society	9 Conference Proceedings Factors Influencing the Threshold Voltages of Metal Oxide CMOS Devices Hobbs, C., Fonseca, L., Samavedam, S., Grant, J., Dhandapani, V., Taylor, B., Dip, L., Triyoso, D., Gilmer, D., … Electrochemical Society
4 Conference Proceedings Advanced Metal Gate FinFET CMOS TEchnology Y. Liu, T. Matsukawa, K. Endo, M. Masahara, S. Ouchi Electrochemical Society	10 Conference Proceedings Impact of Lanthanide Contamination on ULSI CMOS Taylor, W., Lovejoy, L., Tobin, P.J., Jiang, Z.X., Lerma, J., Nguyen, J.-Y., Garcia, R. Electrochemical Society
5 Conference Proceedings Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation Hobbs, C., Hegde, R., Maiti, B., Nagabushnam, R., La, L., Reid, K., Dip, A., Grove, L., Conner, J., Kaushik, V., Prabhu, … MRS - Materials Research Society	11 Conference Proceedings Novel HfSiON Gate Dielectric for Advanced CMOS Devices Colombo, L., Visokay, M.R., Chambers, J.J., Rotondaro, A.L.P., Shanware, A., Bevan, M.J., Bu, H., Tsung, L. Electrochemical Society
6 Conference Proceedings Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices B. H. Lee, P. Kirsch, P. Majhi, S. Song, R. Chol, N. Moumen, G. Bersuker Electrochemical Society	12 Conference Proceedings Copper metallization for on-chip interconnects Gelatos,A.V., Nguyen,B.-Y., Perry,K.A., Marsh,R., Peschke,J., Filipiak,S., Travis,E.O., Thompson,M.A., Saaranen,T., … SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12