Single-electron transport through the Anderson center on Si(100)surface

Single-electron transport through the Anderson center on Si(100)surface

Author(s):

Bagraev,N.T. ( A.F.Ioffe Physical-Technical Institute )

Publication title:

Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering : 7-11 June 1999, St. Petersburg, Russia

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4064

Pub. date:

2000

Page(from):

135

Page(to):

139

Pub. info.:

Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819436993 [0819436992]

Language:

English

Call no.:

P63600/4064

Type:

Conference Proceedings

Details

TDL ID:	ZA00016655
Series ID:	PA00000029
Conf. info. (Name):	International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Conf. info. (Number):	1999 : 3rd
Conf. info. (Venue):	St. Petersburg, Russia
Conf. info. (Date):	1999.06.07-1999.06.11

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