IR tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots

IR tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots

Author(s):

Publication title:

Nondestructive methods for materials characterization : symposium held November 29-30, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

591

Pub. Year:

2000

Page(from):

213

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994997 [1558994998]

Language:

English

Call no.:

M23500/591

Type:

Conference Proceedings

Details

TDL ID:	ZA00016644
Series ID:	PA00000011
Conf. info. (Name):	Nondestructive Methods for Materials Characterization : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.29-1999.11.30

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