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ANISOTROPIC SURFACE ROUGHNESS IN STRAIN RELAXED In0.40Ga0.60As ON GaAs WITH A STEP-GRADED InxGa1-xAs BUFFER LAYER

Author(s):
Publication title:
Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
312
Pub. date:
1993
Page(from):
107
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992085 [1558992081]
Language:
English
Call no.:
M23500/312
Type:
Conference Proceedings

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