FORMATION OF INTRINSIC DEFECTS AT MBE-GROWN GaAs/AlAs INTERFACES

FORMATION OF INTRINSIC DEFECTS AT MBE-GROWN GaAs/AlAs INTERFACES

Author(s):

Publication title:

Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

312

Pub. Year:

1993

Page(from):

89

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992085 [1558992081]

Language:

English

Call no.:

M23500/312

Type:

Conference Proceedings

Details

TDL ID:	ZA00016597
Series ID:	PA00000011
Conf. info. (Name):	Symposium on common themes and mechanisms of epitaxial growth
Conf. info. (Number):	1993
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1993.04.13-1993.04.15

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