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Effect of End-of-Range Defects, Arsenic Clustering, and Precipitation on Transient-Enhanced Diffusion in As+- Implanted Si

Author(s):
Publication title:
Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
469
Pub. date:
1997
Page(from):
401
Pub. info.:
Pittsburg, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993730 [1558993738]
Language:
English
Call no.:
M23500/469
Type:
Conference Proceedings

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