Influence of Dynamic Annealing on the Depth Distribution of Germanium Implanted in (100) Silicon at Elevated Temperatures

Influence of Dynamic Annealing on the Depth Distribution of Germanium Implanted in (100) Silicon at Elevated Temperatures

Author(s):

Publication title:

Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

469

Pub. Year:

1997

Page(from):

387

Pub. info.:

Pittsburg, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993730 [1558993738]

Language:

English

Call no.:

M23500/469

Type:

Conference Proceedings

Details

TDL ID:	ZA00016586
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects and diffusion in silicon processing
Conf. info. (Number):	1997
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1997.04.01-1997.04.04

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