Blank Cover Image

The Effect of Oxygen on the Electrical Activation and Diffusion of Ion-Implanted Boron

Author(s):
Larsen, K. Kyllesbech
Stolk, P. A.
Privitera, V.
Berkum, J. G. M. van
Boer, W. B. de
Mannino, G.
Cowern, N. E. B.
Huizing, H. G. A.
3 more
Publication title:
Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
469
Pub. Year:
1997
Page(from):
291
Pub. info.:
Pittsburg, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993730 [1558993738]
Language:
English
Call no.:
M23500/469
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Low-Energy Implantation and Transient-Enhanced Diffusion: Physical Mechanisms and Technology Implications

Cowern, N. E. B., Collart, E. J. H., Politiek, J., Bancken, P. H. L., Berkum, J. G. M. van, Larsen, K. Kyllesbech, …

MRS - Materials Research Society
7 Conference Proceedings Diffusion of Ion-Implanted Boron and Silicon in Germanium

Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G.

Materials Research Society
2 Conference Proceedings Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

Mannino, G., Cowern, N. E. B., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Boer, W. B. de, …

MRS - Materials Research Society
8 Conference Proceedings DIFFUSION AND ACTIVATION DURING RAPID THERMAL ANNEALING OF IMPLANTED BORON IN SILICON

Cowern, N.E.B., Yallup, K.J., Godfrey, D.J., Hasko, D.G., McMahon, R.A., Ahmed, H., Stobbs, W.M., McPhail, D.S.

Materials Research Society
3 Conference Proceedings Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon

Cowern, N.E.B., Mannino, G., Roozeboom, F., Stalk, P.A., Huizing, H.G.A., van Berkum, J.G.M, Toan, N.N., Woerlee, P.H., …

Electrochemical Society
9 Conference Proceedings Indium in Silicon: A Study on Diffusion and Electrical Activation

Scalese, S., Magna, A. La, Mannino, G., Privitera, V., Bersani, M., Giubertoni, D., Solmi, S., Pichler, P.

Materials Research Society
4 Conference Proceedings Room-Temperature Migration of Ion-Implanted Boron in Silicon

Collart, E. J. H., Weemers, K., Gravesteijn, D. J., Berkum, J. G. M. van, Cowern, N. E. B.

MRS - Materials Research Society
10 Conference Proceedings Ultra-Low Energy Boron Implants in Crystalline Silicon: Atomic Transport Properties and Electrical Activation

Napolitani, E., Carnera, A., Privitera, V., Magna, A. La, Schroer, E., Priolo, F., Mannino, G., Moffatt, S.

MRS - Materials Research Society
5 Conference Proceedings Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion

Cowern, N.E.B., Mannino, G., Roozeboom, F., van Berkum, J.G.M, Colombeau, B., Claverie, A.

Electrochemical Society
11 Conference Proceedings Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

Privitera, V., Coffa, S., Larsen, K. Kyllesbech, Libertino, S., Mannino, G., Priolo, F.

MRS - Materials Research Society
6 Conference Proceedings Defects and Diffusion in Silicon An Overview

Cowern, N. E. B., Mannino, G., Stolk, P. A., Theunissen, M. J. J.

MRS - Materials Research Society
12 Conference Proceedings Ultrashallow Junction Formation And Gate Activation In Deep-Submicron CMOS

Stolk, Peter A., Cubaynes, Florence N., Meyssen, Veerle, Mannino, Giov'anni, Cowern, Nicholas E.B., Zijl, Jeroen van, …

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12