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Boron Clustering in Silicon Under an Interstitial Flux: A Study Using Delta-Doped Structures

Author(s):
Publication title:
Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
469
Pub. Year:
1997
Page(from):
277
Pub. info.:
Pittsburg, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993730 [1558993738]
Language:
English
Call no.:
M23500/469
Type:
Conference Proceedings

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