Lattice Disorder Effects on the Vacancy-Oxygen Center in Ion-Irradiated Silicon
- Author(s):
- Publication title:
- Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 469
- Pub. Year:
- 1997
- Page(from):
- 233
- Pub. info.:
- Pittsburg, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993730 [1558993738]
- Language:
- English
- Call no.:
- M23500/469
- Type:
- Conference Proceedings
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