Blank Cover Image

Point Defect Injection Kinetics by N2O Oxidation of Silicon

Author(s):
Publication title:
Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
469
Pub. Year:
1997
Page(from):
133
Pub. info.:
Pittsburg, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993730 [1558993738]
Language:
English
Call no.:
M23500/469
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings POINT DEFECT INJECTION IN SILICON DURING THIN OXIDE FORMATION

Skarlatos, D., Omri, M., Tsamis, C., Claverie, A., Tsoukalas, D.

Electrochemical Society
7 Conference Proceedings Annealing Behavior Of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient

Tsamis, C., Skarlatos, D., Raptis, I., Tsoukalas, D., Calvo, P., Colombeau, B., Cristiano, F., Claverie, A.

Materials Research Society
2 Conference Proceedings Estimation of Point Defect Fundamental Properties Using SOI Structures and Devices

Tsoukalas, D., Tsamis, C., Kouvatsos, D., Skarlatos, D.

Electrochemical Society
8 Conference Proceedings Porous silicon for chemical sensors

Tsamis, C., Nassiopoulou, A.

Kluwer Academic Publishers
3 Conference Proceedings Estimation of the Number of Injected Interstitial Atoms During Nitrous Oxidation of Silicon

Skarlatos, D., Giles, L. F., Tsamis, C., Claverie, A., Tsoukalas, D.

MRS - Materials Research Society
9 Conference Proceedings Restructuration-Doping Process Near the Poly Si/SiO2 Interface on Silicon During the Phosporus Diffusion

Gaiseanu, F., Dimitriadis, C.A., Stoemenos, J., Postolache, C., Tsoukalas, D., Kruger, D., Tsoi, E.

Electrochemical Society
4 Conference Proceedings Use of Isotopically Pure Silicon Material to Estimate Silicon Diffusivity in Silicon Dioxide

Tsoukalas, D., Tsamis, C., Normand, P.

Materials Research Society
10 Conference Proceedings Fabrication Characteristics of Midgap Metal Gates Compatible With Thin SiO2 Films Using Low Pressure Chemically Vapor Deposited Tungsten Films

Kouvatsos, D.N., Ioannou-Sougleridis, V., Tsevas, S., Davazoglou, D., Christoforou, F., Boukouras, C.

Electrochemical Society
5 Conference Proceedings Polycrystalline Silicon Thin Film Transistors With Gate Oxides Deposited by LPCVD Using Tetraethylorthosilicate (TEOS)

Kouvatsos, D.N., Vamvakas, V.E., Davazoglou, D.

Electrochemical Society
11 Conference Proceedings Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons

Kuriplach,J., Hoecke,T.van, Waeyenberge,B.van, Dauwe,C., Segers,D., Balcaen,N., Morales,A.L., Trauwaert,M.-A., …

Trans Tech Publications
6 Conference Proceedings SILICON MEMBRAN STUDIES OF POINT DEFECT TRANSPORT KINETICS DURING THERMAL OXIDATION

Ahn, S.T., Shott, J.D., Tiller, W.A.

Materials Research Society
12 Conference Proceedings Thin film transistors fabricated in laser crystallized chemically vapor deposited amorphous silicon films on quartz substrates

Kouvatsos, D. N., Vbutsas, A. T., Papaioannou, G. J.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12