Gate Electrode Effects on Dielectric Breakdown of SiO2

Gate Electrode Effects on Dielectric Breakdown of SiO2

Author(s):

Publication title:

Amorphous and crystalline insulating thin films--1996 : symposium held December 2-4, 1996, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

446

Pub. Year:

1997

Page(from):

3

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993501 [1558993509]

Language:

English

Call no.:

M23500/446

Type:

Conference Proceedings

Details

TDL ID:	ZA00016584
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous and crystalline insulating thin films
Conf. info. (Number):	1996
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1996.12.02-1996.12.04

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