RHEED Intensity Observation of AlAs and GaAs by In Situ Etching Using Arsenic Tribromide

RHEED Intensity Observation of AlAs and GaAs by In Situ Etching Using Arsenic Tribromide

Author(s):

Publication title:

Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

405

Pub. Year:

1996

Page(from):

67

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993082 [1558993088]

Language:

English

Call no.:

M23500/405

Type:

Conference Proceedings

Details

TDL ID:	ZA00016580
Series ID:	PA00000011
Conf. info. (Name):	Symposium on surface/interface and stress effects in electronic material nanostructures
Conf. info. (Number):	1995
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.12.01

Similar Items:

1 Conference Proceedings Atomic Layer Precise Etching with AsBr3 in Molecular Beam Epitaxy Eberl, K., Kaneko, T., Maier, S. Electrochemical Society	7 Conference Proceedings REDUCTION OF INTERNAL STRESS OF a-Si:H FILMS BY IN SITU MEASUREMENTS OF OPTICAL EMISSION INTENSITY FROM SiH4 PLASMA Tamahashi, L., Wakagi, M., Ishiwaka, F., Kaneko, T., Tamura, K., Satoh, A., Hanazono, M. Materials Research Society
2 Conference Proceedings The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ* Removal by Si-Vapor Etching* S. Ushio, A. Adachi, K. Matsuda, N. Ohtani, T. Kaneko Trans Tech Publications	8 Conference Proceedings In Situ Observation of Metal State in Pitting of Stainless Steel Kimura, M., Kaneko, M. Electrochemical Society
3 Conference Proceedings Optical Properties of GaAs / AlAs Superlattices Gobel O. E., Feldmann J., Fischer R., Peter G., Sattmann R., Hebling J., Kuhl J., Muralidharan R., Ploog K., Dawson P., … Plenum Press	9 Conference Proceedings ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures Mochizuki,Y., Mizuta,M., Mochiznki,A. Trans Tech Publications
4 Conference Proceedings Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy Sarid,D., Yao,X., Workman,R.K., Peterson,C.A., Fallahi,M. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs,AlAs/GaAs,and AIN Buffer Layers Strittmatter,A., Krost,A., Schatke,K., Bimberg,D., Blasing,J., Christen,J. Trans Tech Publications
5 Conference Proceedings Structural Analysis of Water Molecular Assembly in Hydrophobic Micropores Using in situ Small Angle X-Ray Scattering Iiyama, T., Ozeki, S., Kaneko, K. Elsevier	11 Conference Proceedings Selective Area Growth of AlGaAs and AlAs on GaAs(001) by PSE/MBE Bacchin, G., Tsunoda, K., Nishinaga, T. Electrochemical Society
6 Conference Proceedings Novel Wet Taper Etching of Interconnects on Large Area Substrates Using Galvanic Reaction Kaneko, T., Hashimoto, Y., Ono, K., Fujii, K., Onisawa, K. Electrochemical Society	12 Conference Proceedings In Situ Observation of UV/Ozone Oxidation of Silicon Using Spectroscopic Ellipsometry Saitoh, T., Kobayashi, D., Kimura, D., Asai, K. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12