Utilization of Amorphous Silicon Carbide (a-Si:C:H) as a Resistive Layer in Gas Microstrip Detectors

Utilization of Amorphous Silicon Carbide (a-Si:C:H) as a Resistive Layer in Gas Microstrip Detectors

Author(s):

Publication title:

Amorphous silicon technology, 1995 : Symposium held April 18-21, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

377

Pub. Year:

1995

Page(from):

523

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992801 [1558992804]

Language:

English

Call no.:

M23500/377

Type:

Conference Proceedings

Details

TDL ID:	ZA00016578
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous silicon technology
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.18-1995.04.21

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