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Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

Author(s):
Publication title:
Amorphous silicon technology, 1995 : Symposium held April 18-21, 1995, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
377
Pub. Year:
1995
Page(from):
443
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992801 [1558992804]
Language:
English
Call no.:
M23500/377
Type:
Conference Proceedings

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