Blank Cover Image

ELASTIC MISFIT STRAIN RELAXATION IN HIGHLY STRAINED InAs DOTS ON GaAs AS STUDIED BY TEM, AFM AND VFF ATOMISTIC CALCULATIONS

Author(s):
Androussi, Y.
Francois, P.
Lefebvre, A.
Priester, C.
Lefebvre, I.
Allan, G.
Lannoo, M.
Moison, J. M.
Lebouche, N.
Barthe, F.
5 more
Publication title:
Evolution of thin film and surface structure and morphology : symposium held November 28-December 2, 1994, Boston, Massachusetts, USA
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
355
Pub. Year:
1995
Page(from):
569
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992566 [1558992561]
Language:
English
Call no.:
M23500/355
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings STRAINED LAYER GROWTH: HOW DO 3D ISLANDS RELAX STRAINS?

Priester, C., Lefebvre, I., Allan, G., Lannoo, M.

MRS - Materials Research Society
7 Conference Proceedings ELECTRICAL CHARACTERIZATION OF HIGHLY STRAINED ULTRATHIN InAs/GaAs QUANTUM WELLS

Yu, F., Droopad, R., Maracas, G. N., Liu, J., Rajesh, R., Carpenter, R. W.

MRS - Materials Research Society
2 Conference Proceedings STRAINED LAYER EPITAXY: THE ROLE OF A CAPPING LAYER AND MECHANISM OF STRAIN COMPENSATION IN MULTILAYERS SYSTEMS

Lefebvre, I., Priester, C., Allan, G., Lannoo, M.

MRS - Materials Research Society
8 Conference Proceedings Strain Relaxation in GaAs on Si by Two Groups of Misfit Dislocations

Tamura, M., Saitoh, T., Yodo, T.

MRS - Materials Research Society
3 Conference Proceedings STRAINED LAYER EPITAXY: A MICROSCOPIC DESCRIPTION OF STRESS DRIVEN SURFACE DIFFUSION

Lefebvre, I., Priester, C., Allan, G., Lannoo, M.

MRS - Materials Research Society
9 Conference Proceedings Coupled Quantum Dot-Based InAs/GaAs Laser Structure Studied by Contactless Electroreflectance and Surface Photovoltage Spectroscopy

Aigouy, L., Holden, T., Pollak, F.H., Ledentsov, N.N., Ustinov, V.M., Kop'ev, P.S., Bimberg, D.

Electrochemical Society
4 Conference Proceedings Relation Between Schottky Barrier Heights, Band Offsets and Energy Levels of Transition Metal Impurities

Lannoo M., Priester C., Allan G., Lefebvre I., Delerue C.

Plenum Press
10 Conference Proceedings Atomistic simulation study of misfit strain relaxation mechanisms in heteroepitaxial islands

Dongare, Avinash M., Zhigilei, Leonid

Materials Research Society
5 Conference Proceedings Nucleation and growth of InAs islands on GaAs: An optical study

Gerard -M. J., Genin B. J., Lefebvre J., Marzin Y. J., Barrier D., Moison M. J.

Kluwer Academic Publishers
11 Conference Proceedings Misfit Dislocations and Elastic Relaxation

Strunk, H. P., Christiansen, S., Albrecht, M.

MRS - Materials Research Society
6 Conference Proceedings ON THE MOBILITY OF 1/6<112>PARTIAL DISLOCATIONS UNDER HIGH STRESS IN SEMI-INSULATING GaAs.

ANDROUSSI,Y., FRANCOIS,P., PERSIO,J.DI, VANDER-SCHAEVE,G., LEFEBVRE,A.

Trans Tech Publications
12 Conference Proceedings Strain Relaxation by Misfit Dislocations

Mazzer M.

Plenum Press
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12