INFLUENCE OF INTERFACE ROUGHNESS SCATTERING ON ELECTRON MOBILITY IN GaAs-Al0.3Ga0.7As TWO DIMENSIONAL ELECTRON GAS (2DEG) HETEROSTRUCTURES | 東京工業大学附属図書館文献データベース

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INFLUENCE OF INTERFACE ROUGHNESS SCATTERING ON ELECTRON MOBILITY IN GaAs-Al0.3Ga0.7As TWO DIMENSIONAL ELECTRON GAS (2DEG) HETEROSTRUCTURES

Author(s):

Cheng, Yong-Hai

Publication title:

Evolution of thin film and surface structure and morphology : symposium held November 28-December 2, 1994, Boston, Massachusetts, USA

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

355

Pub. Year:

1995

Page(from):

545

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992566 [1558992561]

Language:

English

Call no.:

M23500/355

Type:

Conference Proceedings

Details

TDL ID:	ZA00016576
Series ID:	PA00000011
Conf. info. (Name):	Symposium on evolution of thin film and surface structure and morphology
Conf. info. (Number):	1994
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1994.11.28-1994.12.02

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