Blank Cover Image

0.25-ｦﾌm multilevel interconnect with DUV processing

Author(s):
Publication title:
Optical Microlithography X
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3051
Pub. Year:
1997
Page(from):
352
Page(to):
361
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819424655 [081942465X]
Language:
English
Call no.:
P63600/3051
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Application of deep-UV resist for 0.25-ｦﾌm metal and poly processing

Krisa,W.L., Progler,C.J., Brennan,K., Schell,J.C.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Integration of Multi-Level Copper Metallization into a High-Performance Sub-0.25 ｦﾌm Technology

Venkatraman, R., Jain, A., Farkas, J., Mendonca, J., Hamilton, G., Capasso, C., Denning, D., Simpson, C., Rogers, B., …

MRS - Materials Research Society
2 Conference Proceedings NA/o optimization strategies for an advanced DUV stepper applied to 0.25-ｦﾌm and sub-0.25-ｦﾌm critical levels

Beeck,M.Op de, Ronse,K., Ghandehari,K., Jaenen,P., Botermans,H., Finders,J., Lilygren,J.A., Baker,D.C., Vandenberghe,G., …

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Minimization of DUV multi-interference effect in 0.25-ｦﾌm device fabrication

Kim,J.H., Moon,S.C., Ko,B.S., Park,J.H., Lee,T.G., Shin,K.S., Kim,D.H.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Improved Al-Via Fill Process Technology for Sub-0.25 ｦﾌm Interconnect

Sengupta, S. S., Narasimhan, M., Lee, S., Abburi, M., Yao, G.

MRS - Materials Research Society
9 Conference Proceedings Characterization of positive DUV resists at 0.25-ｦﾌm polygate using organic and inorganic antireflection schemes

Dass,S.K., Orvek,K.J., Gruber,L., Broomfield,M.C., Tremblay,J., Piasecki,M.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Integration Challenges of Inorganic Low-k (k ｡？2.5) Materials With Cu for Sub-0.25 ｦﾌm Multilevel Interconnects

Yu, K. C., Defilippi, J., Tiwari, R., Sparks, T., Smith, D., Olivares, M., Selinidis, S., Zhang, J., Junker, K., …

MRS - Materials Research Society
10 Conference Proceedings Optical proximity effects correction at 0.25ｦﾌm incorporating process variations in lithography

Tritchkov,A., Rieger,M.L., Stirniman,J.P., Yen,A., Ronse,K., Vandenberghe,G., hove,L.Van den

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Characterization of gate electrode etch process for 0.25 ｦﾌm extended to 0.18 ｦﾌm

Gerung,H., Chhagan,V.K., Yelehanka,P.R., Zhou,M.S., Hui,J.K.L.

SPIE - The International Society for Optical Engineering
11 Conference Proceedings Statistical design of experimental analysis of TiN films deposited by ion metal plasma PVD for sub-0.25-ｦﾌm IC process applications

Hui,S., Ngan,K., Narasimhan,M.K., Forster,J.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Migrating deep-UV lithography to the 0.25-ｦﾌm regime:issues and outlook

Orvek,K.J., Dass,S.K., Gruber,L., Dumford,S.A., Piasecki,M., Pollard,G.W., Fink,I.D.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Process optimization by reducing I-D bias for 0.25-ｦﾌm logic devices

Park,K.-Y., Choi,B.-I., Lee,W.-G., Ko,C.-G.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12