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InAsSb-based midinfrared lasers(3.5 to 3.9 ｦﾌm)and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition

Author(s):
Publication title:
In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3001
Pub. Year:
1997
Page(from):
336
Page(to):
343
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819424129 [0819424129]
Language:
English
Call no.:
P63600/3001
Type:
Conference Proceedings

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