Identification of Bandgap States in Semiconductors by Transmutation of Iuplanted Radioactive Tracers
- Author(s):
- Achtziger,N.
- Publication title:
- Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996
- Title of ser.:
- Materials science forum
- Ser. no.:
- 248-249
- Pub. Year:
- 1997
- Page(from):
- 113
- Page(to):
- 118
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497676 [0878497676]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Radiotracer Identification of Ti,V and Cr Band Gap States in 4H- and 6H-SiC
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
3
Conference Proceedings
Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination
Trans Tech Publications |
10
Conference Proceedings
Enhancement of lonization Efficiency of Acceptors by Their Excited States in Heavily Doped p-Type GaN and Wide Bandgap Semiconductors
Electrochemical Society |
5
Conference Proceedings
An in situ Radioactive Tracer Technique for Studying Adsorption-Desorption Dynamics on a Working Catalyst
Elsevier |
American Institute of Chemical Engineers |
MRS - Materials Research Society |
American Institute of Chemical Engineers |