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Charge Carrier Lifetime Modification in Silicon by High Energy H+,He+ Ion Implantation

Author(s):
Khanh,N.Q.
Tutto,P.
Jaroli,E.N.
Buiu,O.
Biro,L.P.
Paszti,F.
Mohacsy,T.
Kovacsics,C.
Manuaba,A.
Gyulai,J.
5 more
Publication title:
Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996
Title of ser.:
Materials science forum
Ser. no.:
248-249
Pub. date:
1997
Page(from):
101
Page(to):
106
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497676 [0878497676]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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