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Characterization of MBE Grown Si Doped GaAs Layers on(100)GaAs and Si Substrates by Photoluminpscence

Author(s):
Publication title:
Molecular beam epitaxy : proceedings of the Third International Symposium held in Velico Tarnovo, Bulgaria, Oct. 2-7, 1989
Title of ser.:
Materials science forum
Ser. no.:
69
Pub. date:
1991
Page(from):
179
Page(to):
182
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496143 [0878496149]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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