Characterization of In doped CdTe grown by molecular beam epitaxy

Characterization of In doped CdTe grown by molecular beam epitaxy

Author(s):

Kang, T.W. ( Dongguk University, Korea )

Publication title:

Infrared technology and applications XXIV : 19-24 July 1998, San Diego, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3436

Pub. Year:

1998

Vol.:

Part 1

Page(from):

2

Page(to):

9

Pub. info.:

Bellingham, Wash., USA: SPIE

ISSN:

0277786X

ISBN:

9780819428912 [0819428914]

Language:

English

Call no.:

P63600/3436

Type:

Conference Proceedings

Details

TDL ID:	ZA00016480
Series ID:	PA00000029
Conf. info. (Name):	Optics & Photonics : Infrared technology and applications
Conf. info. (Number):	1998 : 24th
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1998.07.19-1998.07.24

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