GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

Author(s):

Kung,P. ( Northwestern Univ. )
Zhang,X. ( Northwestern Univ. )
Walker,D. ( Northwestern Univ. )
Saxler,A. ( Northwestern Univ.and Air Force Research Lab. )
Razeghi,M. ( Northwestern Univ. )

Publication title:

Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3287

Pub. Year:

1998

Page(from):

214

Page(to):

220

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427267 [0819427268]

Language:

English

Call no.:

P63600/3287

Type:

Conference Proceedings

Details

TDL ID:	ZA00016453
Series ID:	PA00000029
Conf. info. (Name):	Photonics West : Photodetectors
Conf. info. (Number):	1998 : 3rd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1998.01.28-1998.01.30

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