Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well

Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well

Author(s):

Anwar,A.F.M. ( Univ.of Connecticut )
Lefebvre,K.R. ( Starrtel Cellular Group,Inc. )

Publication title:

Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3287

Pub. Year:

1998

Page(from):

179

Page(to):

186

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427267 [0819427268]

Language:

English

Call no.:

P63600/3287

Type:

Conference Proceedings

Details

TDL ID:	ZA00016453
Series ID:	PA00000029
Conf. info. (Name):	Photonics West : Photodetectors
Conf. info. (Number):	1998 : 3rd
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1998.01.28-1998.01.30

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