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Large bandgap shift in InGaAs(P)/Inp multiquantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors

Author(s):
Publication title:
Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3287
Pub. Year:
1998
Page(from):
88
Page(to):
95
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427267 [0819427268]
Language:
English
Call no.:
P63600/3287
Type:
Conference Proceedings

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