Determination of the concentration of shallow impurities in semi-insulating GaAs by low-temperature (77 K) photoluminescence

Determination of the concentration of shallow impurities in semi-insulating GaAs by low-temperature (77 K) photoluminescence

Author(s):

Glinchuk,K.D. ( Institute of Semiconductor Physics (Ukraine) )
Litovchenko,N.M. ( Institute of Semiconductor Physics (Ukraine) )
Prokhorovich,A.V. ( Institute of Semiconductor Physics (Ukraine) )
Stril'chuk,O.N. ( Institute of Semiconductor Physics (Ukraine) )

Publication title:

International Conference on Optical Diagnosis of Materials and Devices for Opto-, Micro-, and Quantum Electronics : 13-15 May 1997, Kiev, Ukraine

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3359

Pub. Year:

1998

Page(from):

244

Page(to):

249

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819428080 [0819428086]

Language:

English

Call no.:

P63600/3359

Type:

Conference Proceedings

Details

TDL ID:	ZA00016446
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Optical Diagnosis of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Conf. info. (Number):	1997
Conf. info. (Venue):	Kiev, Ukraine
Conf. info. (Date):	1997.05.13-1997.05.15

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